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HRF3205, HRF3205S
Data Sheet
December 2001
100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
NOTE: Calculated continuous current based on maximum allowable junction temperature. Package limited to 75A continuous, see Figure 9.
Features
100A, 55V (See Note)
Low On-Resistance, rDS(ON) = 0.008 Temperature Compensating PSPICE® Model Thermal Impedance SPICE Model UIS Rating Curve
Related Literature
-TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBERHRF3205HRF3205S
PACKAGETO-220ABTO-263AB
BRAND
HRF3205HRF3205S
G
S
NOTE:When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCEDRAINGATE
GATESOURCE
JEDEC TO-263AB
DRAIN (FLANGE)
©2001 Fairchild Semiconductor CorporationHRF3205, HRF3205S Rev. B